1. IntroductionLithium niobate (LiNbO3, LN) crystal is widely used as a multifunctional material due to its excellent physical and chemical characteristics such as electro-optic, acoustic-optic, nonlinear optics, piezoelectric, ferroelectric, etc.[1,2] Especially, rare-earth (RE)-doped engineering has attracted considerable attention due to its enormous potential applications in optical communications, optical gyroscopes, optical data storage, laser technology, and remote sensing technology, etc. The rich emission spectrum and unique chemical characteristics of rare-earth ions have been widely studied as the new darling of the laser material.[3–7] Among them, Ho
which has a special electronic structure has been the most popular activator ion in recent years. Up to now, the up-conversion luminescence properties of Ho
ions-doped crystals have been extensively investigated. However, the study of the up-conversion luminescence properties of Ho
ions-doped LiNbO
crystal is rarely reported.[8,9] In the present paper, Yb
ion can act as a sensitize ion to increase the up-conversion luminescence intensity of the Ho
ion because it has a simple energy structure and a long excited state lifetime.[10–12] Nevertheless, a problem for applications of LiNbO3 crystal is that the optical damages will appear when the high-power laser irradiates the pure LiNbO3 crystal or the RE-doped LiNbO3 crystal. Doping anti-photorefractive ions can solve this problem. Many previous studies and experimental results showed that doping Mg
ions can significantly improve the optical damage resistance ability.[13]
In our experiments, the congruent Yb:Ho:LiNbO3 crystals co-doping different concentrations of Mg
(1, 3, 5, and 7 mol%) are grown by the Czochralski technique, wherein the concentrations of Ho
and Yb
ions are both 1 mol%. The concentrations of Mg
, Yb
, and Ho
ions are measured by an inductively coupled plasma atomic emission spectrometer (ICP-AES). Internal defect structures are studied via x-ray diffraction (XRD). Finally, the light-induced scattering is as a function of exposure energy, and the influences on the defect structures and the optical damage resistance ability of the Mg:Yb:Ho:LiNbO3 crystals with different Mg
ions doping concentrations are studied. The up-conversion emission spectra, the power pump dependence, and the up-conversion mechanism are measured to understand the influence of Mg
ion on the up-conversion luminescence of Ho
ion in Mg:Yb:Ho:LiNbO3 crystal.
2. ExperimentMg:Yb:Ho:LiNbO3 crystals were successfully grown in air along the c direction by the Czochralski technique. The doping concentrations of Yb
and Ho
ions were 1 mol%, Mg
ions were 1, 3, 5, and 7 mol% in the melt. The chemicals we used were Li2CO3, Nb2O5, Yb2O3, MgO, and Ho2O
(4N purity) to ensure a high optical quality of the grown crystal. The raw materials were heated up to 750
C for 2 h to remove the CO2, and then heated up to 1150
C for 3 h for a solid reaction. In the growth process, the optimum conditions were chosen as follows: the temperature gradient of the furnace was 30
C
cm
–40
C
cm
, the pulling rate was 1 mm/h
2mm/h, and the rotating rate was 20 r/pm
35 r/pm. Finally, the grown crystals were polarized at 1200
C with a current density of the 5 mA/cm2. The polarized crystal was orientational and polished to optical grade. Hereafter, the four samples are denoted as 1#, 2#, 3#, and 4# crystals for convenience.
The concentrations of Mg
, Yb
, and Ho
ions in the Mg:Yb:Ho:LiNbO3 crystals were measured by an inductively coupled plasma atomic emission spectrometer (ICP-AES, Optima 5300DV). The XRD patterns and the lattice constant of Mg:Yb:Ho:LiNbO
crystal were obtained by an XRD-6000 type x-ray diffractometer (SHIMADZU, Japan) to analyze the structural characteristics.[14,15] Up-conversion emission spectra of Mg:Yb:Ho:LiNbO3 and microsecond time-resolved spectra were measured under excitation at 980-nm semiconductor diode laser.[16] Power dependence was measured by using neutral density filters.
Laser irradiation, even the weak laser pumping source, can cause optical damage as long as the exposure time is long enough. For this situation, Zhang et al. proposed a light-induced scattering threshold effect.[17] In the experiment, we adopted a light-induced scattering exposure energy flux threshold method to study the optical damage resistance ability of the samples.[18] The light-induced scattering threshold effect can be quantitatively described by the light intensity value because light-induced scattering is a cumulative effect of the incident light intensity versus time. Therefore, the light-induced scattering threshold effect was proposed to investigate the optical damage resistance ability of the samples. A schematic diagram of the light-induced scattering measurement setup is depicted in Fig. 1. The diode-pumped laser (532 nm) was used as a source, the sample was horizontally polarized, the spot diameter incident on the crystal was 1 mm, and the incident laser power can be adjusted by using an adjustable attenuator. The main role of the diaphragm is to filter scattered light to pass only the central portion of the transmitted light. The diameter of the diaphragm was 1 mm, namely the transmitted beam diameter was equal to the beam diameter incident on the crystal.
3. Results and discussionAs is well known, the properties of crystalline material are decided by the defect structure. To study the performance, the first thing is to determine the actual concentration of the doping ions in the crystal. The concentrations of Mg
, Yb
, and Ho
ions in the Mg:Yb:Ho:LiNbO3 crystals and the values of effective distribution coefficient
are listed in Table 1. The values of effective distribution coefficient
of Mg
, Yb
, and Ho
ions are the concentration percentages in the crystals and melts. The dependence of distribution coefficients of Mg
, Yb
, and Ho
ions on MgO concentration in the melt is shown in Fig. 2.
Table 1.
Table 1.
| Table 1.
Compositions of Mg:Yb:Ho:LiNbO3 crystals and the optimum growth parameters.
. |
It can be clearly seen that the effective distribution coefficient of Mg
ions increases with increasing MgO concentration in the melt. In addition, the values of effective distribution coefficient of Yb
and Ho
ions decrease as the doping concentration of Mg
increases in their coresponding melts. When Mg
ion enters into LiNbO3 crystal, it could readily occupy intrinsic defect Nb
site and the Nb
concentration could be reduced. At this time, Ho
and Yb
ions have always occupied Nb-bits. When the doping concentration of Mg
ions reaches or exceeds the threshold concentration, anti-site Nb
is completely substituted. Mg
ions begin to substitute Li-site and Nb-site of the normal lattice, to form Mg
charge balance so that the effective distribution coefficient of Mg
increases continuously. Nevertheless, the effective distribution coefficients of Yb
and Ho
ions decrease sharply, which is ascribed to Mg
, Yb
, and Ho
ions replacing Nb-bits to form Mg
, Ho
, and Yb
which are negative charge excluding each other.
The x-ray diffraction technique is an important means to study the structure of matter. In addition, it can also accurately determine the lattice parameter to perform phase analysis, then study the crystal integrity. Therefore, the lattice constants and lattice structure are the important parameters of x-ray diffraction analysis. The x-ray diffraction patterns of Mg:Yb:Ho:LiNbO3 crystals and experimental results are shown in Fig. 3.
It can be seen from Fig. 3 that the positions of the diffraction peak of four samples are basically similar, and no new diffraction peaks appear. It indicates that the doping Mg
, Yb
, and Ho
ions cause none of their corresponding crystals to significantly change its internal structure, and they are still trigonal systems, like pure lithium niobate crystal. There is no new phase produced, but the radii of doping Mg
(0.66 Å), Yb
(0.85 Å), and Ho
(0.90 Å) ions are different from those of Li
(0.68 Å) and Nb
(0.69 Å) ions. As is well known, the doping ion radius and defect structure in the crystal will affect the lattice constants and thus the unit cell volume. Therefore, we believe that the doping ions used to substitute Li
and Nb
ions enter into crystal lattices. According to experimental data, the least squares method is used to calculate the lattice constants of each sample, and the results are shown in Table 2. The lattice constants of congruent LiNbO3 crystal are also listed in Table 2 for comparison, marked as sample 0#. Meanwhile, the unit cell volume V,
,
, and
are obtained by the formula
. The
,
, and
can change values of the lattice constant and lattice volume, correspondingly.
Table 2.
Table 2.
| Table 2.
Lattice constants of Mg:Yb:Ho: LiNbO3 crystals.
. |
In conjunction with Fig. 3 and Table 2, it is determined that the change of lattice constant is caused by the different Mg
ions doping concentrations. For samples 1# and 2#, when the Mg
ions doping concentration is below the threshold concentration, the lattice constants increase slightly; it may be caused by Mg
ions replacing the anti-site Nb
defects and then occupying Li-sites. In order to make the crystal keep neutral, the reduced is re-occupied by the same number of Li
ions. The oxygen octahedron is expanded because the polarization ability of Nb
is higher than that of Mg
so that the volume of the unit cell is expanded. In each of samples 3# and 4#, the doping concentration of Mg
ions exceeds the threshold concentration (the threshold concentration of Mg
ions in LiNbO3 crystal is 4.6 mol%), the lattice constants and cell volume both decline. It may be implied that the substitution site of Mg
changes when the doping concentration of Mg
ions exceeds the threshold concentration.
In the light-induced scattering test, the intensity irradiated onto the crystal is divided into three parts. Among them, the transmitted intensity received by photo-detector decreases with the increase of exposure time. The relationship between them is shown in Fig. 4. The scattered intensity depending on the transmitted intensity can be expressed by the following equation
where
is the transmitted intensity when the laser just starts to irradiate Mg:Yb:Ho:LiNbO
3 crystal;
is the transmitted intensity of time
t;
is the scattering ratio, which is defined as the ratio between scattered intensity and incident intensity, and it represents the intensity of the scattered light.
The laser light intensity through a lens (
is divided into two parts, one is the effective intensity incident on the crystal (
, and the other is the reflection of the crystals (
. The relationship between the two is as follows:
According to the definition of exposure energy flow, the effective exposure energy flow irradiating the crystal
is as follows:
where
R is the reflection index and its value for all samples is 0.1454;
τ is the scattering time constant, which represents the required time when the scattering ratio
reaches the equilibrium value. The value of
τ can be obtained from the curve fitting of the mono-exponential function:
where
is the saturation scattering ratio. The relationship between square root of scattering ratio
and exposure time of Mg:Yb:Ho:LiNbO
3 crystal is shown in Fig.
5. The experimental data of exposure energy flux for light-induced scattering of Mg:Yb:Ho:LiNbO
3 crystals are shown in the following Table
3.
The effective exposure energy flux
is used to quantitatively describe the optical damage resistance ability of Mg:Yb:Ho:LiNbO3 crystal. The optical damage resistance ability improves with the value of
increasing. As can be seen from Table 3, the exposure energy of sample 4# is biggest, which is about 425 times higher than that of sample 1#. Under the comprehensive comparison, it can be concluded that the Mg
ions doping concentration of sample 4# is optimal to suppress the light-induced scattering effect.
Up-conversion luminescence wavelengths of the Mg:Yb:Ho:LiNbO3 crystals in a range from 400 nm to 760 nm excited with 980-nm LD are shown in Fig. 6. The spectra exhibit five up-conversion luminescence bands centered at approximately 426 nm (violet, medium), 486 nm (blue, medium), 556 nm (kelly, very strong), 654 nm (red, weak) and 727 nm (red, strong), which are attributed to
,
, (
,
, and
transitions of Ho
ions, respectively.[18]
Figure 7 displays the plots of logarithmic up-conversion intensity versus logarithmic excitation power at 980 nm of Mg:Yb:Ho:LiNbO3 sample. In order to understand the UC mechanism, the pump power dependence of the fluorescent radiation is investigated. The number of photons that are responsible for the upper emitting state can be obtained from the following relation:[20]
where
is the fluorescent intensity,
P is the pump power, and
n is the number of the laser photons required. The
n values are obtained from the slope of the plot of
versus
. As can be observed from Fig.
7, the value at lower pump power is close to 2, which indicates that a two-photon process is involved in the up-conversion emission.
[20]Schematic energy-level diagrams of Ho
and Yb
ions and the up-conversion luminescence mechanism for Mg:Yb:Ho:LiNbO3 crystals are illustrated in Fig. 8. The up-conversion process in Mg:Yb:Ho:LiNbO3 crystal is briefly described as follows. First, the sensitizer Yb
ions are excited from the
to
level upon the absorption of NIR photons (980 nm). The ions then transfer energy to the Yb
ions, excited Yb
ions populate
,
,
, and
energy levels of Ho
. The
energy levels can drop to
,
, and
levels via nonradioactive relaxation and via multi phonon relaxation. The
state relaxes to the
and
states in cascade, emitting blue 486 nm
and green 561 nm
radiations. The partial populations at the
level directly relax to
states in cascade, emitting the violet 426 nm
radiation.
Figure 9 shows the dependence of up-converted intensity of the sample on Mg
concentration under excitation at 980 nm. We can see the up-conversion luminescence intensity of the crystal increases with the increase of Mg
doping concentration. Our results suggest that the increasing of the doping concentration of Mg
may be favorable to the electrons located at the
,
,
,
, and
energy levels, and thereby significantly increases the spectrum transitions from them to the
level. This is because the incorporation of Mg
takes the place of the former electron trap, further reduces the rate of non-radiative transition of electrons, improves the luminescence environment of Ho
, and strengthens the radiation transition.